| PART |
Description |
Maker |
| NJL4302DG NJL4281D NJL4281DG NJL4302D |
Complementary ThermalTrak Transistors
|
ONSEMI[ON Semiconductor]
|
| NJL1302D NJL3281D |
Complementary ThermalTrak Transistors
|
ONSEMI[ON Semiconductor]
|
| NJL21193DG |
(NJL21193DG / NJL21194DG) Complementary ThermalTrak Transistors
|
ON Semiconductor
|
| NJL3281D06 NJL3281DG NJL1302DG NJL3281D NJL1302D |
Complementary ThermalTrak Transistors
|
ONSEMI[ON Semiconductor]
|
| MCRF355 MCRF360 |
The MCRF355 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features optimized at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
The MCRF360 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features operating at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
|
Microchip
|
| MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| MJH6287 MJH6284 ON2053 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
20 AMPERE COMPLEMENTARY SILICON
|
ONSEMI[ON Semiconductor]
|
| 2N3055MJ2955 MJ2955 2N3055 ON0038 2N3055_MJ2955 |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 120 VOLTS 115/ 180 WATTS
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 15安培功率晶体管互补性的芯片6015
Complementary SlllconPower Translstors
From old datasheet system
|
ON Semiconductor
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| FDG8842CZ |
Complementary PowerTrench? MOSFET
Complementary PowerTrench㈢ MOSFET
|
Fairchild Semiconductor
|
| MJL0281A MJL0281AG MJL0302A MJL0302AG JL0281AG |
Complementary Power Transistors
Complementary NPN-PNP Power Bipolar Transistors
|
ON Semiconductor
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
